dr hab. inż. Ryszard Kisiel, prof. uczelni
Instytut Mikroelektroniki i Optoelektroniki PW
ul. Koszykowa 75 pok. 425 (GR)
00-662 Warszawa
tel. (22) 234 7852
e-m@il:

M.Sc (1974) materials science, Ph.D. (1983) electron technology, both from Warsaw University of Technology and D.Sc from Wrocław University of Technology in (2010), microelectronics.

My previous research and development activities had been in the areas of surface mount technology, especially in applying lead-free technology and using electrically conductive adhesives in printed circuit board technology. My current research areas are concentrated on assembly of high power devices, especially SiC and GaN chips using Ag sintering as well as solid liquid inter-diffusion (SLID) technologies.

Publikacje z lat 2019-2024:
  • M. Myśliwiec, R. Kisiel, M.J. Kruszewski, Influence of Ag particle shape on mechanical and thermal properties of TIM joints, Microelectronics International 39 (4), 2022, pp. 188-193, http://dx.doi.org/10.1108/mi-06-2022-0108
  • M. Myśliwiec, R. Kisiel, M.J. Kruszewski, Pressureless Direct Bonding of Au Metallized Substrate with Si Chips by Micro-Ag Particles, 45th International Spring Seminar on Electronics Technology, Conference Program & Extended Abstracts / Wohlrabe Heinz, Krammer Oliver, Nicolics Johann (red.), Germany, TU Wien and Eugen G.Leuze Verlag , 2022, pp. 46-47, http://dx.doi.org/ISBN 978-3-87480-374-8
  • M. Myśliwiec, R. Kisiel, K. Pavłov et al., Pressureless Direct Bonding of Au Metallized Substrate with Si Chips by Micro-Ag Particles, 45th International Spring Seminar on Electronics Technology (ISSE), Institute of Electrical and Electronics Engineers , 2022, pp. 1-7, http://dx.doi.org/10.1109/isse54558.2022.9812830
  • M. Myśliwiec, R. Kisiel, Development of SLID Bonding Technology for GaN Assembly Based on Ag Microflakes, Proc. of ISSE 2019 (881026142), 2019, http://dx.doi.org/10.1109/ISSE.2019.8810261
  • P. Górecki, K. Górecki, R. Kisiel, M. Myśliwiec, Thermal Parameters of Monocrystalline GaN Schottky Diodes, IEEE Transactions on Electron Devices 66 (5), 2019, pp. 2132-2138, http://dx.doi.org/10.1109/TED.2019.2907066